APTGTQ150TA65TPG APTGTQ150TA65TPG C rev 0 may, 2016 www.microsemi.com 1-6 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per igbt) these devices are sensitiv e to electrostatic discharge. proper handing procedures should be followe d. r1 ntc2 ntc1 w g4 e3 g3e4 g2 g1 vbus1 vbus2 e1 v u 0/vbus1 e2 0/vbus2 vbus3 e6 g5 e5 g6 0/vbus3 symbol parameter max ratings unit v ces collector - emitter voltage 650 v i c continuous collector current t c = 25c 150 a t c = 80c 90 i cm pulsed collector current t c = 25c 300 v ge gate C emitter voltage 20 v p d power dissipation 365 w v ces = 650v i c = 150a @ tc = 25c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt5 technology - low voltage drop - low tail current - switching frequency up to 100 khz - low leakage current ? kelvin emitter for easy drive ? very low stray inductance ? lead frames for power connections ? high level of integration ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant triple phase leg high speed trenchstop 5 igbt power module downloaded from: http:///
APTGTQ150TA65TPG APTGTQ150TA65TPG C rev 0 may, 2016 www.microsemi.com 2-6 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 650v 150 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 150a t j = 25c 1.65 2.2 v t j = 150c 1.9 v ge ( th ) gate threshold voltage v ge = v ce , i c = 1.5ma 3.3 4.0 4.7 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 360 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 9000 pf c oes output capacitance 150 c res reverse transfer capacitance 33 q g gate charge v ge = 15v, i c = 150a v ce = 520v 360 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 400v i c = 75a r g = 1 21 ns t r rise time 15 t d(off) turn-off delay time 180 t f fall time 18 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 400v i c = 75a r g = 1 20 ns t r rise time 15 t d(off) turn-off delay time 205 t f fall time 26 e on turn on energy v ge = 15v v bus = 400v i c = 75a r g = 1 t j = 150c 2.25 mj e off turn off energy t j = 150c 0.9 r gint integrated gate resistor 1.7 ? r thjc junction to case thermal resistance 0.41 c/w diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 650 v i rm reverse leakage current v r =650v 150 a i f dc forward current tc = 25c 150 a v f diode forward voltage i f = 150a v ge = 0v t j = 25c 1.6 2.2 v t j = 150c 1.65 t rr reverse recovery time i f = 75a v r = 400v di/dt =4500a/s t j = 25c 46 ns t j = 150c 62 q rr reverse recovery charge t j = 25c 1.5 c t j = 150c 3 r thjc junction to case thermal resistance 0.47 c/w downloaded from: http:///
APTGTQ150TA65TPG APTGTQ150TA65TPG C rev 0 may, 2016 www.microsemi.com 3-6 temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 125 torque mounting torque to heatsink m6 3 5 n.m wt package weight 250 g package outline (dimensions in mm) see application note 1902 - mounting instructions for sp6-p (12mm) power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGTQ150TA65TPG APTGTQ150TA65TPG C rev 0 may, 2016 www.microsemi.com 4-6 typical performance curve t j =25c t j =150c 0 50 100 150 200 250 300 0 0.5 1 1.5 2 2.5 3 i c (a) v ce (v) output characteristics (v ge =15v) v ge =15v v ge =13v v ge =20v v ge =8v 0 50 100 150 200 250 300 0 0.5 1 1.5 2 2.5 3 3.5 4 i c (a) v ce (v) output characteristics t j = 150c t j =25c t j =150c 0 50 100 150 200 250 300 3.5 4.5 5.5 6.5 7.5 i c (a) v ge (v) transfert characteristics eon eof f 0 3 6 9 12 15 0 50 100 150 200 250 300 e ( m j ) i c (a) energy losses vs collector current v ce = 400v v ge = 15v r g = 1 ? t j = 150c eon eof f 0.5 1 1.5 2 2.5 3 3.5 4 012345 e ( m j ) gate resistance (ohms) v ce = 400v v ge =15v i c = 75a t j = 150c sw itching energy losses vs gate resistance d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration in seconds maxim um effective transient thermal im pedance, junction to case vs pulse duration igbt downloaded from: http:///
APTGTQ150TA65TPG APTGTQ150TA65TPG C rev 0 may, 2016 www.microsemi.com 5-6 t j =25c t j =150c 0 50 100 150 200 250 300 00 . 511 . 522 . 5 i f (a) v f (v) diode forward characteristic hard switching zcs zvs 0 50 100 150 200 250 30 50 70 90 110 130 150 fm ax, operating frequency (khz) i c (a) v ce =300v d=50% r g =1 ? t j =150c t c =85c operating frequency vs collector current d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration in seconds maxim um effective transient thermal im pedance, junction to case vs pulse duratio n diode downloaded from: http:///
APTGTQ150TA65TPG APTGTQ150TA65TPG C rev 0 may, 2016 www.microsemi.com 6-6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreem ent will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with lif e- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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